CdSiOFN

semiconductor

· CdSiOFN

CdSiOFN is an experimental semiconductor compound combining cadmium, silicon, oxygen, fluorine, and nitrogen—a multinary material designed to engineer electronic and optoelectronic properties beyond conventional binary or ternary semiconductors. Research into such mixed-anion and mixed-cation systems focuses on tuning band gaps, carrier mobility, and defect tolerance for next-generation photovoltaics, light-emitting devices, or high-frequency electronics where traditional semiconductors (Si, GaAs, CdTe) reach performance or cost limits.

experimental photovoltaicswide-bandgap semiconductorsoptoelectronic device researchthin-film solar cellshigh-frequency electronicsdefect-tolerant semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	1.473e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CdSiOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control