CdNbO2N is an oxynitride semiconductor compound combining cadmium, niobium, oxygen, and nitrogen elements. This material is primarily of research and developmental interest rather than established industrial production, belonging to the family of metal oxynitrides that are explored for photocatalytic and optoelectronic applications. Its mixed-anion structure (incorporating both oxide and nitride components) offers tunable band gap properties compared to traditional oxides or nitrides alone, making it a candidate for visible-light-driven photocatalysis and potentially for thin-film photovoltaic or photoelectrochemical devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.700 | eV | — | ||
Magnetic Moment(μB) | 0.000109 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3000 | eV/atom | — |