CdInS is a ternary semiconductor ceramic compound combining cadmium, indium, and sulfur elements, belonging to the II-VI semiconductor family. This material is primarily of research and development interest for optoelectronic and photonic applications, particularly in the ultraviolet to visible light spectrum, where its bandgap and optical properties offer potential advantages over binary alternatives like CdS or InS. Engineers consider CdInS when tuning semiconductor characteristics for specialized light-emitting or light-detecting devices, though it remains less common in production than mature binary or ternary compounds due to processing complexity and cadmium toxicity concerns in many jurisdictions.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | -15.94 | GPa | — | ||
Poisson's Ratio(ν) | 0.03000 | - | — | ||
Shear Modulus(G) | -20.55 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.242 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.2710 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.341 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.8924 | eV/atom | — |