CdInAgTe3 is a quaternary semiconductor compound combining cadmium, indium, silver, and tellurium elements, belonging to the class of chalcogenide semiconductors. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in optoelectronic devices and radiation detection systems where its bandgap properties could provide advantages in specific wavelength ranges. Engineers evaluating this compound should recognize it as an experimental material whose viability depends on successful synthesis scaling, cost optimization, and performance validation against more conventional alternatives like CdTe or InSb in target applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 38.71 | GPa | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G) | 13.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.684 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00500 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00950 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2816 | eV/atom | — |