CdIn2Te4 is a ternary semiconductor compound belonging to the II-VI semiconductor family, combining cadmium, indium, and tellurium in a specific stoichiometric ratio. This material is primarily of research and development interest for infrared detection and imaging applications, where its bandgap and optical properties position it as a candidate for thermal sensing in the mid-to-long wavelength infrared spectrum. While less common than binary alternatives like CdTe or InSb, CdIn2Te4 offers potential for tuning detector performance in specialized aerospace, defense, and scientific instrumentation contexts, though widespread commercial adoption remains limited and material processing remains technically challenging.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.17 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 14.60 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.599 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.280 | eV | — | ||
| ↳ | 0.7150 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 14.78 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5032 | C/m² | — | ||
Seebeck Coefficient(S) | -87.67 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3508 | eV/atom | — |