CdHgAsBr is a quaternary semiconductor ceramic compound combining cadmium, mercury, arsenic, and bromine elements. This material belongs to the family of II-VI semiconductors and represents a research-stage compound of primary interest in optoelectronic and infrared detector applications where tunable bandgap properties are valued. The combination of heavy elements affords potential use in radiation detection and specialized photonic devices, though commercial adoption remains limited compared to more established binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.112 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9510 | eV | DFT · OptB88vdW | ||
| ↳ | 2.088 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.229 | - | DFT · OptB88vdW | ||
| ↳ | 5.631 | - | DFT · TBmBJ | ||
Thermoelectric Power Factor(PF)2 entries | 0.000436 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00295 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -58.49 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 285.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 21.04 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1152 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2494 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data