CdGeN₂ is an ternary ceramic compound combining cadmium, germanium, and nitrogen—a member of the II-IV-N₂ ceramic family that exhibits semiconducting and refractory properties. This material exists primarily in research and development contexts as a potential wide-bandgap semiconductor, with theoretical applications in optoelectronics and high-temperature/high-power device environments where conventional nitrides (GaN, AlN) may have limitations. Its stiffness and density profile position it as a candidate for novel photonic devices and thermal management applications, though industrial production and deployment remain limited compared to established III-V nitride ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 149.2 | GPa | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 75.97 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.570 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8700 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02420 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.03350 | eV/atom | — |