CdBiS₂Br is a ternary chalcohalide ceramic compound combining cadmium, bismuth, sulfur, and bromine elements. This is a research-phase material studied primarily for optoelectronic and photonic applications rather than a commercial engineering ceramic. The mixed-anion structure (sulfide-bromide) and heavy metal composition position this compound within the broader family of semiconducting ceramics being investigated for infrared detection, nonlinear optical devices, and solid-state photonics where conventional materials reach performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.089 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.781 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 57.99 | - | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -158 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6414 | eV/atom | — |