CdBeO2S

semiconductor

· CdBeO2S

CdBeO2S is a rare ternary semiconductor compound combining cadmium, beryllium, oxygen, and sulfur elements. This material exists primarily in research and developmental contexts rather than as a mature industrial product, with potential applications in optoelectronic and photovoltaic device research where the mixed anion system (oxide-sulfide) may enable band gap tuning. Interest in this compound stems from the semiconductor family's capacity to fill niche roles in UV-visible light emission or detection, though cadmium and beryllium toxicity and scarcity present significant barriers to widespread commercial adoption compared to mainstream alternatives like GaN or CdTe.

research optoelectronicsexperimental semiconductorsband gap engineeringphotovoltaic device developmentUV-visible detectors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	-0.000192	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.320	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CdBeO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control