CdAs (cadmium arsenide) is a II-VI semiconductor ceramic compound notable for its direct bandgap properties and potential applications in optoelectronic devices. While not a mainstream industrial material, it belongs to the cadmium chalcogenide family studied for infrared detection, photovoltaic research, and specialized semiconductor applications where its electronic properties offer advantages in specific wavelength ranges. Engineers would consider this material primarily in research and development contexts for next-generation detectors or high-efficiency photonic devices, though regulatory restrictions on cadmium in many regions limit commercial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.250 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1273 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.09835 | eV/atom | — |