Cadmium arsenide (CdAs) is a binary compound semiconductor ceramic combining cadmium and arsenic elements. It belongs to the II-VI semiconductor family and is primarily of research and specialized optoelectronic interest rather than a commodity engineering material. CdAs has been investigated for infrared detection, photovoltaic applications, and high-frequency electronic devices, though it remains less developed than related compounds like CdTe or GaAs due to toxicity concerns with cadmium and processing challenges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.313 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1030 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -156.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.06956 | eV/atom | — |