CdAg₂GeS₄ is a quaternary semiconductor compound belonging to the class of chalcogenide semiconductors, combining cadmium, silver, germanium, and sulfur in a structured crystalline lattice. This material is primarily of research and developmental interest rather than established industrial production, explored for its potential in non-linear optical applications, photovoltaic devices, and infrared detection systems where its band gap and crystal symmetry may offer advantages over binary or ternary semiconductors. The incorporation of both cadmium and silver, combined with germanium and sulfur, positions it within the broader family of complex semiconductors being investigated for specialized optoelectronic and photonic applications where conventional materials show limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 56.01 | GPa | — | ||
Poisson's Ratio(ν) | 0.3800 | - | — | ||
Shear Modulus(G) | 14.85 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.695 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.320 | eV | — | ||
| ↳ | 0.4740 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3698 | eV/atom | — |