Cd₆As₄ is a cadmium arsenide compound semiconductor belonging to the III-V and II-VI hybrid semiconductor family. This material is primarily of research and development interest rather than widely commercialized, with potential applications in optoelectronic and photovoltaic devices where its electronic band structure offers specific advantages over more conventional semiconductors. Engineers would consider this compound in specialized applications requiring tailored bandgap properties or high-frequency response characteristics in niche research environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 46.77 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 11.50 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02350 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.09400 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data