Cd₅Ga₂S₂Te₆ is a mixed-cation chalcogenide semiconductor compound combining cadmium, gallium, sulfur, and tellurium in a complex crystal structure. This material belongs to the family of ternary and quaternary semiconductors designed for infrared and optoelectronic applications, though it remains largely in the research phase rather than widespread industrial production. The incorporation of both sulfur and tellurium, along with multiple metal cations, allows tuning of the bandgap and optical properties, making it potentially valuable for mid-to-long-wavelength infrared detection, nonlinear optics, or specialized photonic devices where conventional III–V or II–VI semiconductors fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.290 | eV | — |