Cd₄As₂I₃ is a ternary semiconductor compound combining cadmium, arsenic, and iodine elements, belonging to the family of mixed-halide and chalcogenide semiconductors. This material is primarily of research interest rather than established industrial production, being investigated for potential optoelectronic and radiation detection applications where its band structure and carrier transport properties may offer advantages in specialized device contexts. Its development reflects broader research into alternative semiconductor compositions for photovoltaics, X-ray/gamma-ray detection, and solid-state devices where conventional materials face limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.890 | eV | — |