Cd₄Ga₂Ag₂S₈ is a quaternary semiconductor compound combining cadmium, gallium, silver, and sulfur elements, belonging to the family of complex chalcogenide semiconductors. This is a research-stage material investigated primarily for optoelectronic and photovoltaic applications where its tunable bandgap and mixed-cation structure may offer advantages in light absorption or charge transport. The material represents an exploratory direction in semiconductor engineering for next-generation thin-film devices, though industrial adoption remains limited compared to established binary or ternary alternatives like CdTe or CIGS.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.67 | GPa | — | ||
Shear Modulus(G) | 17.68 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9947 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6100 | eV/atom | — |