Cd3In2S2Te4

semiconductor

· Cd3In2S2Te4

Cd₃In₂S₂Te₄ is a quaternary II-III-VI semiconductor compound combining cadmium, indium, sulfur, and tellurium in a mixed chalcogenide structure. This is primarily a research-phase material studied for its potential in infrared optics and photodetection applications, where the sulfur-tellurium composition offers tunable bandgap and absorption characteristics across the near- to mid-infrared spectrum. The material belongs to the broader class of ternary and quaternary chalcogenides being investigated as alternatives to single-composition semiconductors (CdTe, InTe) for applications requiring specific wavelength sensitivity or thermal stability.

infrared detectorsthermal imaging sensorssolar cells (narrow bandgap)photonic devicesresearch semiconductorstunable optical materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.230	eV	—

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Regulatory Screening

Environmental

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Cd3In2S2Te4

Electrical Properties

Regulatory Screening

Environmental

Export Control