Cd₃In₂(Te₂S)₂ is a quaternary semiconductor compound combining cadmium, indium, tellurium, and sulfur—a mixed chalcogenide material with a layered or complex crystal structure. This compound belongs to the family of narrow-bandgap semiconductors and is primarily studied in research contexts for optoelectronic and photovoltaic applications where tunable bandgap and mixed anion engineering offer advantages over binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.230 | eV | — |