Cd₂TeSe is a ternary II-VI semiconductor ceramic formed from cadmium, tellurium, and selenium. This material belongs to the narrow-bandgap semiconductor family and is primarily of research and developmental interest rather than established industrial production. The compound is investigated for optoelectronic and infrared detector applications where its tunable bandgap (between CdTe and CdSe end-members) offers potential advantages over binary alternatives, though widespread commercial adoption remains limited due to processing complexity, toxicity concerns with cadmium, and competing mature technologies in most end markets.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.84 | GPa | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G) | 13.83 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.490 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2790 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00650 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4975 | eV/atom | — |