Cd₂I₄ (cadmium iodide) is a semiconductor compound belonging to the II-VI semiconductor family, characterized by cadmium cations and iodide anions in a layered crystal structure. While primarily of research interest, this material is investigated for potential applications in radiation detection, photovoltaic devices, and optoelectronic components due to its wide bandgap and strong light-absorption properties. The layered nature of Cd₂I₄ distinguishes it from more conventional semiconductors, offering unique possibilities for thin-film devices, though commercial deployment remains limited compared to established alternatives like CdTe or CdZnTe.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19.49 | GPa | — | ||
Shear Modulus(G) | 9.373 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.119 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5810 | eV/atom | — |