Cd₁Se₀.₂S₀.₈ is a cadmium chalcogenide mixed-anion semiconductor, a solid solution alloy combining cadmium selenide and cadmium sulfide phases. This material is primarily investigated in research and early-stage photonic applications where tunable bandgap in the visible to near-infrared region is required; it offers composition flexibility to engineer optical and electronic properties for quantum dots, photovoltaic devices, and photodetectors, though it remains less common in production than binary CdSe or CdS due to manufacturing complexity and cadmium toxicity restrictions in many markets.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.230 | eV | — |