Cd1 In1 Ga1 S4

semiconductor

· Cd1 In1 Ga1 S4

Cd₁In₁Ga₁S₄ is a quaternary chalcogenide semiconductor compound combining cadmium, indium, gallium, and sulfur in a 1:1:1:1 stoichiometry. This material belongs to the family of multinary sulfide semiconductors being explored for photovoltaic and optoelectronic applications, where its tunable bandgap and layered crystal structure offer potential advantages over binary and ternary semiconductor alternatives. While primarily a research compound, it represents an important direction in thin-film solar cell development and wide-bandgap semiconductor engineering, where compositional flexibility allows optimization for specific optical and electrical properties.

thin-film photovoltaicswide-bandgap semiconductorsoptoelectronic devicesresearch/development materialsphotocurrent generationbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	41.99	GPa	—
Shear Modulus(G)	10.65	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01980	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3970	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd1 In1 Ga1 S4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control