Cd0.99Te0.99Al0.01Sb0.01

semiconductor

· Cd0.99Te0.99Al0.01Sb0.01

Cd0.99Te0.99Al0.01Sb0.01 is a quaternary compound semiconductor based on the cadmium telluride (CdTe) system, with aluminum and antimony as dopants or alloying elements to modify electronic properties. This is primarily a research and development material rather than a commercial product, investigated for tuning the bandgap and carrier concentration of CdTe to optimize performance for specific optoelectronic applications. The substitutional doping approach enables engineering of charge transport and optical response compared to undoped CdTe, making it relevant for detector and photovoltaic device optimization.

gamma-ray and X-ray detectorshigh-efficiency photovoltaic researchinfrared optoelectronicsbandgap engineeringradiation detection devicesthin-film semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.99Te0.99Al0.01Sb0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control