Cd0.8Hg0.2Se1

semiconductor
· Cd0.8Hg0.2Se1

Cd₀.₈Hg₀.₂Se is a cadmium-mercury-selenide ternary alloy semiconductor belonging to the II-VI compound family, engineered by tuning the cadmium-to-mercury ratio to adjust the bandgap and lattice properties. This material is primarily investigated for infrared optoelectronic devices, particularly long-wavelength infrared (LWIR) detectors and thermal imaging applications, where the mercury content lowers the bandgap relative to pure CdSe, enabling sensitivity in the 8–14 μm atmospheric window. The Hg-containing composition offers improved performance over binary alternatives in cryogenic or room-temperature infrared sensing, though it remains primarily a research and specialized aerospace/defense material due to mercury toxicity concerns and the dominance of HgCdTe in established LWIR markets.

infrared detectorsthermal imaging sensorslong-wavelength IR optoelectronicsaerospace sensing systemsresearch-phase semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
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Regulatory Screening

Environmental

Export Control

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