Cd0.8Hg0.2Se1
semiconductorCd₀.₈Hg₀.₂Se is a cadmium-mercury-selenide ternary alloy semiconductor belonging to the II-VI compound family, engineered by tuning the cadmium-to-mercury ratio to adjust the bandgap and lattice properties. This material is primarily investigated for infrared optoelectronic devices, particularly long-wavelength infrared (LWIR) detectors and thermal imaging applications, where the mercury content lowers the bandgap relative to pure CdSe, enabling sensitivity in the 8–14 μm atmospheric window. The Hg-containing composition offers improved performance over binary alternatives in cryogenic or room-temperature infrared sensing, though it remains primarily a research and specialized aerospace/defense material due to mercury toxicity concerns and the dominance of HgCdTe in established LWIR markets.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |