Cd0.1In0.9Te0.1As0.9
semiconductor· Cd0.1In0.9Te0.1As0.9
Cd₀.₁In₀.₉Te₀.₁As₀.₉ is a quaternary III-V semiconductor alloy combining cadmium, indium, tellurium, and arsenic—a research-stage compound within the InAs-based semiconductor family engineered to tune bandgap and lattice parameters for specialized optoelectronic applications. This material falls into the category of narrow-bandgap semiconductors and represents an experimental composition designed to explore intermediate optical and electronic properties between binary and ternary compounds. Such quaternary alloys are primarily investigated in academic and defense research contexts for infrared detection, quantum devices, and next-generation photonic systems where bandgap engineering is critical.
infrared detectorsquantum well devicesoptoelectronic researchbandgap engineeringdefense/aerospace sensorsexperimental photonics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.