Cd0.06In0.94Te0.06As0.94

semiconductor

· Cd0.06In0.94Te0.06As0.94

Cd₀.₀₆In₀.₉₄Te₀.₀₆As₀.₉₄ is a narrow-bandgap semiconductor alloy based on indium arsenide (InAs) with cadmium telluride (CdTe) dopants, designed to achieve intermediate energy bandgap characteristics between its parent compounds. This material is primarily of research and development interest for infrared photodetection and thermal imaging applications, where the modified bandgap enables tuning of spectral response in the mid-to-far infrared range. The cadmium and tellurium additions to the InAs lattice represent an experimental strategy to engineer detector sensitivity for specific wavelength windows in ways that neither pure InAs nor CdTe alone can provide, making it relevant for specialized sensing where bandgap engineering is critical.

infrared photodetectorsthermal imaging sensorsresearch bandgap engineeringspectral response tuninghigh-temperature sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.06In0.94Te0.06As0.94

Electrical Properties

Regulatory Screening

Environmental

Export Control