Cd0.02In0.98Te0.02As0.98
semiconductor· Cd0.02In0.98Te0.02As0.98
Cd₀.₀₂In₀.₉₈Te₀.₀₂As₀.₉₈ is a heavily indium-rich III-V semiconductor alloy based on the InAs system, with small cadmium and tellurium dopant additions. This is a narrow-bandgap compound semiconductor primarily of research and exploratory interest, used to engineer specific electronic and optoelectronic properties in specialized device applications. The material family is notable for infrared sensitivity and high carrier mobility, making it relevant for advanced detector and communication systems operating in wavelength regimes where conventional semiconductors are less effective.
infrared photodetectorsterahertz detectorshigh-speed electronicsresearch semiconductorsquantum dots (experimental)narrow-bandgap optoelectronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.