This is a quaternary III-V semiconductor alloy combining cadmium, tellurium, aluminum, and antimony in a heavily aluminum-antimony dominated composition. This represents an experimental or specialized research compound within the AlSb semiconductor family, with minor Cd and Te dopants or alloying elements intended to modify electronic or optical properties for specific device applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.210 | eV | — |