CaGeO2S

semiconductor

· CaGeO2S

CaGeO2S is a mixed-anion semiconductor compound combining calcium, germanium, oxygen, and sulfur elements, belonging to the class of chalcogenide-oxide materials. This is largely a research-phase compound studied for its potential in optoelectronic and photonic applications, particularly in infrared detection and nonlinear optical devices where the combination of covalent bonding from both oxygen and sulfur anions can tailor electronic properties. The material represents exploration into intermediate bandgap semiconductors and wide-bandgap alternatives where engineering the anion chemistry allows tuning of optical transparency windows and defect tolerance compared to single-anion systems.

infrared optoelectronicsnonlinear optical devicesphotonic detectorswide-bandgap semiconductorsresearch-phase optical materialsdefect-tolerant semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	-3.443e-7	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CaGeO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control