CaGaN3 is a ternary ceramic nitride compound composed of calcium, gallium, and nitrogen, belonging to the family of wide-bandgap semiconductors and advanced ceramics. This material is primarily of research and development interest rather than established industrial production, with potential applications in high-temperature electronics, power devices, and optoelectronic systems where thermal stability and wide bandgap properties are advantageous over conventional semiconductors. Its development is motivated by the search for alternatives to gallium nitride (GaN) and other III-V nitrides that can operate at extreme temperatures or in chemically harsh environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 3.539 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.760 | eV/atom | — |