Ca₄Bi₂As₂O₁₂ is a complex oxide semiconductor compound combining calcium, bismuth, and arsenic in a crystalline structure. This material belongs to the family of multinary semiconductors and is primarily investigated in research contexts for potential optoelectronic and photovoltaic applications, where the bismuth and arsenic components can provide bandgap tunability and photon absorption characteristics distinct from simpler binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.310 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.291 | eV/atom | — |