Ca₃In₂As₄ is a ternary ceramic compound belonging to the III-V semiconductor family, composed of calcium, indium, and arsenic. This material is primarily of research and development interest rather than established industrial production, with potential applications in optoelectronic and high-temperature semiconductor device development where compound semiconductors offer advantages over conventional silicon. Its notable position in the calcium-indium-arsenic phase space makes it a candidate for exploring novel band structure properties and thermal stability in niche semiconductor applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.621 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2120 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 16.53 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.9018 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data