Calcium arsenide nitride (Ca₃AsN) is an experimental III-V semiconductor compound combining calcium with arsenic and nitrogen elements. This material belongs to the broader family of wide-bandgap semiconductors under active research for next-generation electronic and optoelectronic devices. While not yet commercially established, compounds in this material class are investigated for potential applications requiring high thermal stability, radiation hardness, or operation in extreme environments where conventional semiconductors fail.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.37 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 55.18 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7590 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.276 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data