Ca₂Ga₂N₂ is a wide-bandgap nitride semiconductor compound belonging to the family of III-V nitride materials. This material is primarily of research interest for next-generation optoelectronic and power electronic devices, where its wider bandgap compared to conventional semiconductors offers potential advantages in high-temperature operation, high-power applications, and ultraviolet emission. Engineers consider nitride semiconductors like this as alternatives to silicon and traditional III-V compounds when extreme thermal stability, radiation hardness, or deep-UV functionality is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00270 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8940 | eV/atom | — |