Calcium beryllium arsenide (Ca₁Be₂As₂) is a ternary III-V semiconductor compound belonging to the chalcopyrite-type structural family. This material remains primarily in the research and development phase, with potential applications in high-frequency optoelectronic devices where its wide bandgap and thermal properties could offer advantages over conventional binary semiconductors like GaAs or GaN.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 73.64 | GPa | — | ||
Shear Modulus(G) | 53.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8193 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6980 | eV/atom | — |