C6N8 is an experimental carbon-nitrogen compound semiconductor belonging to the family of carbon nitride materials, which are being investigated as alternatives to traditional semiconductors due to their wide bandgap and potential for high-performance applications. This research-phase material is primarily studied in academic and advanced materials laboratories for its potential in high-temperature electronics, UV detection, and hard coating applications, where its theoretical combination of semiconductor properties with enhanced mechanical hardness could offer advantages over conventional silicon or gallium nitride devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 413.7 | GPa | — | ||
Shear Modulus(G) | 320.4 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.587 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.4900 | eV/atom | — |