Carbon nitride (C₃N₄) is a wide-bandgap semiconductor compound composed of carbon and nitrogen atoms in a 3:4 stoichiometric ratio, representing a promising material class still largely in research and development stages. It is investigated for photocatalytic applications, particularly in water splitting and environmental remediation, as well as potential use in high-temperature electronics and optoelectronic devices; the material is notable for its chemical stability and tunable electronic properties, though industrial production and integration remain limited compared to established semiconductors like GaN or SiC. Engineering interest centers on its potential to enable cost-effective, visible-light-active photocatalysts and its capacity to operate in harsh chemical environments where conventional semiconductors would degrade.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 207.6 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 165.0 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.302 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3380 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data