C12 Er8 is a rare-earth doped semiconductor compound, likely an erbium-containing crystalline material in the C12 structural family, used primarily in optoelectronic and photonic applications. This material is notable in telecommunications and laser systems where erbium dopants enable wavelength-specific emission and amplification around 1.5 μm, making it valuable for fiber-optic signal processing and integrated photonics. Er-doped semiconductors are chosen over alternatives when wavelength selectivity, quantum efficiency, and compatibility with silica-based optical networks are critical design drivers.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01950 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4070 | eV/atom | — |