C1Si1 is a binary semiconductor compound composed of carbon and silicon in a 1:1 stoichiometric ratio, representing a theoretical or experimental phase in the C-Si system. This material exists primarily in research contexts as scientists explore intermediate compositions between pure silicon and silicon carbide (SiC) for potential semiconductor and materials applications. The compound's position between two technologically important materials (Si and SiC) makes it relevant to fundamental solid-state physics and potential future wide-bandgap semiconductor development, though industrial-scale applications remain limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 212.8 | GPa | — | ||
Shear Modulus(G) | 197.6 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.620 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2450 | eV/atom | — |