BTeO2F

semiconductor

· BTeO2F

BTeO2F is a tellurium-based oxide fluoride semiconductor compound combining barium (B), tellurium (Te), oxygen, and fluorine in a mixed-anion crystal structure. This is a research-phase material studied for its potential optical and electronic properties, belonging to the broader family of fluorotellurite and tellurite semiconductors that show promise in photonic and nonlinear optical applications. The fluorine substitution into tellurium oxide frameworks is of interest for tailoring bandgap, refractive index, and thermal stability compared to conventional tellurite ceramics, though industrial adoption remains limited and material synthesis and reproducibility are still being refined.

nonlinear optical devicesphotonic crystalsinfrared opticssolid-state laser hostsresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—
Magnetic Moment(μB)	-5.821e-17	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.080	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BTeO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control