BNbO₃ is a ternary oxide semiconductor compound in the perovskite family, combining boron, niobium, and oxygen. This material is primarily of research interest for its potential in optoelectronic and ferroelectric applications, as niobium oxides are known for high dielectric strength and photocatalytic activity. Industrial adoption remains limited; the material is studied as a candidate for next-generation photocatalysts, thin-film capacitors, and possibly nonlinear optical devices, offering potential advantages over conventional semiconductors in niche high-temperature or high-frequency environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.744 | eV | — | ||
| ↳ | 1.400 | eV | — | ||
Magnetic Moment(μB)2 entries | -0.00100 | μB | — | ||
| ↳ | 0.0000207 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.190 | eV/atom | — | ||
| ↳ | 1.200 | eV/atom | — |