BiZn2VO6
semiconductorBiZn2VO6 is a ternary oxide semiconductor compound containing bismuth, zinc, and vanadium, belonging to the mixed-metal oxide family typically investigated for photocatalytic and optoelectronic applications. This material is primarily found in research and development contexts rather than established commercial production, where it is evaluated for photocatalytic degradation of pollutants, visible-light-driven water splitting, and potentially gas-sensing applications due to the favorable band gap tuning enabled by its multi-element composition. The combination of bismuth and vanadium oxides is known to offer enhanced light absorption and charge carrier separation compared to single-component alternatives, making such compounds promising candidates for environmental remediation and renewable energy technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |