BiTeI is a layered ternary semiconductor compound composed of bismuth, tellurium, and iodine, belonging to the family of bismuth chalcohalides. This material is primarily investigated in research and emerging device contexts rather than established industrial production, with interest driven by its layered crystal structure that enables mechanical exfoliation and potential for 2D device applications. BiTeI shows promise in thermoelectric energy conversion, topological electronics, and optoelectronic devices where its tunable bandgap and anisotropic transport properties could offer advantages over conventional semiconductors, though widespread commercial deployment remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.30 | GPa | — | ||
Exfoliation Energy(Eexf) | 103.6 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 12.46 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.573 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4600 | eV | — | ||
| ↳ | 1.200 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 23.74 | - | — | ||
| ↳ | 35.57 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.2752 | C/m² | — | ||
| ↳ | 0.1168 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -144.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3690 | eV/atom | — |