BiSnO2N

semiconductor

· BiSnO2N

BiSnO₂N is an experimental ternary oxynitride semiconductor combining bismuth, tin, oxygen, and nitrogen. This material belongs to the metal oxynitride family, which is actively researched for photocatalytic and optoelectronic applications where bandgap engineering and visible-light absorption are priorities. BiSnO₂N remains primarily in the research phase; it is notable for potential applications in photocatalysis and energy conversion where the nitrogen incorporation lowers the bandgap compared to binary oxides, making it relevant to engineers developing next-generation environmental remediation or solar energy devices.

photocatalysis researchvisible-light water splittingenvironmental pollutant degradationexperimental optoelectronicsbandgap-engineered semiconductorssolar energy conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	—
Magnetic Moment(μB)	-0.000444	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiSnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control