BiSe
semiconductorBismuth selenide (BiSe) is a layered semiconductor compound belonging to the V-VI binary chalcogenide family, notable for its weak van der Waals interlayer bonding that enables mechanical exfoliation into thin sheets. While primarily a research material rather than an established commercial product, BiSe and related bismuth chalcogenides are investigated for thermoelectric energy conversion, topological electronic states, and optoelectronic devices due to their tunable band gap and anisotropic transport properties. Engineers consider this material for next-generation applications where layered structure and semiconductor properties offer advantages over bulk alternatives, particularly in scenarios requiring high surface-to-volume ratios or exploiting quantum transport phenomena.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Exfoliation Energy(Eexf) | — | meV/atom | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |