BiRuN3 is an experimental ternary nitride compound combining bismuth, ruthenium, and nitrogen, representing an emerging class of refractory semiconductor materials. Research into such compounds is motivated by potential applications in extreme-environment electronics and hard coating systems, though BiRuN3 remains primarily a laboratory material without established industrial production. Its notable advantage over conventional semiconductors lies in the combination of thermal stability and hardness characteristic of transition metal nitrides, making it conceptually interesting for high-temperature or wear-resistant device applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2000 | eV | — | ||
Magnetic Moment(μB) | 0.02413 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.140 | eV/atom | — |