BiMgO2F is an experimental mixed-metal oxyfluoride semiconductor containing bismuth and magnesium. This compound belongs to the broader class of metal oxyfluorides, which are of research interest for their potential to combine the electronic properties of oxides with the chemical tunability offered by fluorine substitution. While not yet established in mainstream industrial production, materials in this chemical family are being investigated for photocatalytic applications, optoelectronic devices, and as potential alternatives to conventional semiconductors where fluorine incorporation can modify band structure or enhance specific functional properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.100 | eV | — | ||
Magnetic Moment(μB) | 2.696e-16 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.4600 | eV/atom | — |