BiInO3 is a bismuth indium oxide compound belonging to the ternary oxide semiconductor family, combining bismuth and indium in a perovskite-related crystal structure. This material is primarily of research interest for optoelectronic and photocatalytic applications, where the bandgap and electronic structure make it potentially valuable for visible-light-driven processes and thin-film device architectures. BiInO3 represents an emerging alternative within bismuth-based semiconductor oxides, offering distinct electronic properties compared to more established compounds like BiVO4, though industrial adoption remains limited and most applications remain in the development or proof-of-concept stage.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.645 | eV | — | ||
| ↳ | 2.300 | eV | — | ||
Magnetic Moment(μB) | 0.000189 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.621 | eV/atom | — | ||
| ↳ | 0.7000 | eV/atom | — |