BiInN3 — Properties & Data | MatWorld

BiInN3

ceramic

· BiInN3

BiInN3 is an experimental ternary nitride ceramic compound combining bismuth, indium, and nitrogen—part of the broader family of III-V and mixed-metal nitride semiconductors under active research. This material remains largely in the development phase and is primarily of interest for advanced optoelectronic and wide-bandgap semiconductor applications where the unique electronic properties of bismuth-containing nitrides could enable new device architectures or extended spectral ranges beyond conventional GaN or InN systems.

wide-bandgap semiconductors (research)optoelectronic devices (exploratory)high-frequency electronics (potential)high-temperature applications (candidate)photonic/UV applications (emerging)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	2.407	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.920	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental