Bismuth iodide (BiI₃) is a layered halide perovskite semiconductor with a narrow bandgap, belonging to the family of metal halides under investigation as alternatives to lead-based perovskites in photovoltaic and optoelectronic devices. The material is primarily of research interest rather than commercial production, valued for its lower toxicity compared to lead halides while maintaining semiconducting properties suitable for light absorption and charge transport. Its layered crystal structure and moderate mechanical properties make it a candidate for flexible and thin-film optoelectronic applications, though performance optimization and stability remain active areas of development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15.62 | GPa | — | ||
Exfoliation Energy(Eexf) | 96.21 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 5.110 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.052 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.800 | eV | — | ||
| ↳ | 1.655 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 16.59 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -282.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.08030 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.3902 | eV/atom | — | ||
| ↳ | -0.3930 | eV/atom | — |